irfz24vs IRFZ24VL hexfet ? power mosfet 02/14/02 v dss = 60v r ds(on) = 60m ? i d = 17a s d g advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (IRFZ24VL) is available for low-profile applications. advanced process technology ultra low on-resistance dynamic dv/dt rating 175 c operating temperature fast switching fully avalanche rated optimized for smps applications description absolute maximum ratings parameter max. units i d @ t c = 25 c continuous drain current, v gs @ 10v 17 i d @ t c = 100 c continuous drain current, v gs @ 10v 12 a i dm pulsed drain current 68 p d @t c = 25 c power dissipation 44 w linear derating factor 0.29 w/ c v gs gate-to-source voltage 20 v i ar avalanche current 17 a e ar repetitive avalanche energy 4.4 mj dv/dt peak diode recovery dv/dt 4.2 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c d 2 pak irfz24vs to-262 IRFZ24VL www.irf.com 1 parameter typ. max. units r jc junction-to-case ??? 3.4 r ja junction-to-ambient (pcb mounted)** ??? 40 thermal resistance c/w pd - 94182
irfz24vs/IRFZ24VL 2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25 c, i s = 17a, v gs = 0v t rr reverse recovery time ??? 53 79 ns t j = 25 c, i f = 17a q rr reverse recovery charge ??? 90 130 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 17 68 a repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) starting t j = 25 c, l = 300h r g = 25 ? , i as = 17a, v gs =10v (see figure 12) i sd 17a, di/dt 240a/s, v dd v (br)dss , t j 175 c pulse width 400s; duty cycle 2%. notes: this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175 c . uses irfz24v data and test conditions. ** when mounted on 1" square pcb (fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 ??? ??? vv gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.06 ??? v/ c reference to 25 c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 60 m ? v gs = 10v, i d = 10a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 7.8 ??? ??? sv ds = 25v, i d = 10a ??? ??? 25 a v ds = 60v, v gs = 0v ??? ??? 250 v ds = 48v, v gs = 0v, t j = 150 c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 23 i d = 17a q gs gate-to-source charge ??? ??? 7.7 nc v ds = 48v q gd gate-to-drain ("miller") charge ??? ??? 6.2 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 7.6 ??? v dd = 30v t r rise time ??? 46 ??? i d = 17a t d(off) turn-off delay time ??? 21 ??? r g = 18 ? t f fall time ??? 24 ??? v gs = 10v, see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 590 ??? v gs = 0v c oss output capacitance ??? 140 ??? v ds = 25v c rss reverse transfer capacitance ??? 23 ??? pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ??? 140 43 mj i as = 17a, l = 300h nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current
irfz24vs/IRFZ24VL www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 4 6 8 10 12 v = 25v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 17a
irfz24vs/IRFZ24VL 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 20 24 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 17a v = 12v ds v = 30v ds v = 48v ds 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25 c tj = 175 c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 1 10 100 v ds , drain-to-source voltage (v) 0 200 400 600 800 1000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
irfz24vs/IRFZ24VL www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 5 10 15 20 t , case temperature ( c) i , drain current (a) c d v ds 90% 10% v gs t d(on) t r t d(off) t f v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 10a. switching time test circuit fig 10b. switching time waveforms
irfz24vs/IRFZ24VL 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v gs fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current 25 50 75 100 125 150 175 0 20 40 60 80 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 6.9a 12a 17a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
irfz24vs/IRFZ24VL www.irf.com 7 peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - r g v dd ? dv/dt controlled by r g ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t * circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer * reverse polarity of d.u.t for p-channel v gs [ ] [ ] *** v gs = 5.0v for logic level and 3v drive devices [ ] *** fig 14. for n-channel hexfet ? power mosfets
irfz24vs/IRFZ24VL 8 www.irf.com d 2 pak package outline d 2 pak part marking information 10.16 (.400) r e f. 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r e f. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m ax. notes: 1 dimensions after solder dip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - gate 2 - d ra in 3 - source 2.54 (.100) 2x part number international rectifier logo date code (yyw w ) yy = year ww = week assembly lot code f530s 9b 1m 9246 a
irfz24vs/IRFZ24VL www.irf.com 9 to-262 part marking information to-262 package outline
irfz24vs/IRFZ24VL 10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir ? s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/02 d 2 pak tape & reel information 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
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